2N5883 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W)

2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for
general−purpose power amplifier and switching applications.
Features
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 1.0 Vdc, (max) at I_C = 15 Adc
• Low Leakage Current
I_CEX = 1.0 mAdc (max) at Rated Voltage
• Excellent DC Current Gain −
h_FE = 20 (min) at I_C = 10 Adc
• High Current Gain Bandwidth Product −
f_t = 4.0 MHz (min) at I_C = 1.0 Adc
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{2N5883, 2N5885}
2N5884, 2N5886
V_CEO
Vdc
60
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector−Base Voltage}
V_CB
2N5883, 2N5885
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N5884, 2N5886
Vdc
60
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current −}
Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
V_EB
5.0
Vdc
I_C
Adc
25
50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
I_B
7.5
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25°C}
P_D
200
W
Derate above 25°C
1.15
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
T_J, T_stg – 65 to + 200 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
q_JC
0.875
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
http://onsemi.com
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTORS
60 − 80 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
2N588xG
AYYWW
MEX
2N588x
G
A
YY
WW
MEX
= Device Code
x = 3, 4, 5, or 6
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 11
Publication Order Number:
2N5883/D