2N5550_07 Datasheet, PDF (4/6 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

2N5550, 2N5551
2.5
2.0
T_J = − 55°C to +135°C
1.5
1.0
0.5
q_VC for V_CE(sat)
0
− 0.5
− 1.0
q_VB for V_BE(sat)
− 1.5
− 2.0
− 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I_C, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
10.2 V
V_in
10 ms
INPUT PULSE
t_r, t_f ≤ 10 ns
DUTY CYCLE = 1.0%
V_BB
−8.8 V
100
0.25 mF _RB
5.1 k
V_in
100
V_CC
30 V
3.0 k R_C
V_out
1N914
Values Shown are for I_C @ 10 mA
Figure 6. Switching Time Test Circuit
100
70
T_J = 25°C
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2 0.3
C_ibo
C_obo
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
1000
500
300
200
t_r @ V_CC = 30 V
100
I_C/I_B = 10
T_J = 25°C
t_r @ V_CC = 120 V
50
t_d @ V_EB(off) = 1.0 V
30
V_CC = 120 V
20
10
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
I_C, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
100 200
5000
3000
t_f @ V_CC = 120 V
2000
t_f @ V_CC = 30 V
1000
500
300 _{ts @ VCC = 120 V}
200
I_C/I_B = 10
T_J = 25°C
100
50
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
I_C, COLLECTOR CURRENT (mA)
Figure 9. Turn−Off Time
100 200
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