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2N5550_07 Datasheet, PDF (2/6 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon
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2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
2N5550
140
−
Vdc
2N5551
160
−
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
V(BR)CBO
2N5550
160
−
Vdc
2N5551
180
−
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
V(BR)EBO
6.0
−
Vdc
2N5550
2N5551
2N5550
2N5551
ICBO
−
100
nAdc
−
50
−
100
mAdc
−
50
IEBO
−
50
nAdc
hFE
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
60
−
−
80
−
60
250
80
250
20
−
30
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Both Types
2N5550
2N5551
VCE(sat)
−
0.15
Vdc
−
0.25
−
0.20
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Both Types
−
1.0
Vdc
2N5550
−
1.2
2N5551
−
1.0
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N5550
2N5551
fT
Cobo
Cibo
100
300
−
6.0
−
30
−
20
MHz
pF
pF
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
hfe
NF
2N5550
2N5551
50
200
−
dB
−
10
−
8.0
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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