2N5550_07 Datasheet, PDF (1/6 Pages) ON Semiconductor – Amplifier Transistors NPN Silicon

2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Symbol
2N5550
2N5551
V_CEO
Value
140
160
Unit
Vdc
Collector − Base Voltage
V_CBO
Vdc
2N5550
160
2N5551
180
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_EBO
I_C
P_D
6.0
Vdc
600
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
P_D
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
555x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 5
x = 0 or 1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5550/D