2N5302_06 Datasheet, PDF (4/5 Pages) ON Semiconductor – High−Power NPN Silicon Transistor

2N5302
300
200
T_J = 175°C
100
25°C
70
50
−55 °C
30
20
V_CE = 10 V
V_CE = 2.0 V
2.0
1.6
I_C = 2.0 A 5.0 A
10 A
1.2
0.8
0.4
T_J = 25°C
20 A
10
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10
30
I_C, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
I_B, BASE CURRENT (AMP)
Figure 10. Collector Saturation Region
10⁸
V_CE = 30 V
10⁷
I_C = 10 x I_CES
10⁶
I_C = 2 x I_CES
10⁵
I_C ≈ I_CES
10⁴
10³ TYPICAL I_CES VALUES OBTAINED
FROM FIGURE 13
10²
0 20 40 60 80 100 120 140 160 180 200
T_J, JUNCTION TEMPERATURE (°C)
Figure 11. Effects of Base−Emitter Resistance
2.0
1.8
T_J = 25°C
1.6
1.4
1.2
1.0
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE(on) @ V_CE = 2.0 V
0.4
0.2
V_CE(sat) @ I_C/I_B = 10
0
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10
30
I_C, COLLECTOR CURRENT (AMP)
Figure 12. “On” Voltages
10³
V_CE = 30 V
10²
T_J = 175°C
100°C
10¹
10⁰
I_C = I_CES
10^−1
25°C
10^{− 2}
REVERSE
FORWARD
10^{− 3}
−0.4 −0.3 −0.2 −0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region
+2.5
+2.0
T_J = −55°C to +175°C
+1.5
*APPLIES FOR I_C/I_B <
hFE @ VCE
2
+
2.0 V
+1.0
+0.5
*qV_C for V_CE(sat)
0
−0.5
−1.0
−1.5
qV_B for V_BE(sat)
−2.0
−2.5
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0
10
30
I_C, COLLECTOR CURRENT (AMP)
Figure 14. Temperature Coefficients
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