2N5302_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – High−Power NPN Silicon Transistor

2N5302
High−Power NPN Silicon
Transistor
High−power NPN silicon transistors are for use in power amplifier
and switching circuits applications.
Features
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 0.75 Vdc (Max) @ I_C = 10 Adc
• Pb−Free Package is Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{MAXIMUM RATINGS (Note 1) (T}J ^{= 25°C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Rating
Symbol
Value
Unit
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous (Note 2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
V_CEO
V_CB
I_C
I_B
P_D
60
Vdc
60
Vdc
30
Adc
7.5
Adc
200
W
1.14
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
T_J, T_stg – 65 to + 200 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
q_JC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Case−to−Ambient}
q_CA
0.875
34
_C/W
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
T_A T_C
8.0 200
6.0 150
T_C
http://onsemi.com
30 AMPERES
POWER TRANSISTOR
NPN SILICON
60 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
2N5302G
AYYWW
MEX
4.0 100
T_A
2.0 50
00
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006− Rev. 2
2N5302 = Device Code
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
2N5302
2N5302G
TO−204
TO−204
(Pb−Free)
100 Units/Tray
100 Units/Tray
Publication Order Number:
2N5302/D