2N5302_06 Datasheet, PDF (3/5 Pages) ON Semiconductor – High−Power NPN Silicon Transistor

2N5302
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
SINGLE PULSE
0.01
0.02 0.03 0.05 0.1 0.2 0.3 0.5
q_JC(t) = r(t) q_JC
P_(pk)
q_JC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) q_JC(t)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
1.0 2.0 3.0 5.0 10
t, TIME (ms)
20 30 50
Figure 4. Thermal Response
100 200 300 500 1000 2000
100
50
100 ms
20
10
5302
5.0 ms
5.0
T_J = 200°C
1.0 ms ^dc
2.0
Secondary Breakdown Limited
1.0
Bonding Wire Limited
Thermal Limitations
T_C = 25°C
0.5
Pulse Duty Cycle ≤ 10%
0.2
2N5302
0.1
1.0
2.0 3.0 5.0
10
20 30 50
100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
3000
2000
T_J = 25°C
1000
C_ib
500
C_ob
300
200
100
0.5
1.0
2.0 3.0 5.0 7.0 10
20 30 50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
5.0
3.0
T_J = 25°C
2.0
I_C/I_B = 10
1.0
0.7
0.5
0.3
t_r @ V_CC = 30 V
0.2
t_r @ V_CC = 10 V
0.1
t_d @ V_OB = 2.0 V
0.07
0.05
0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
I_C, COLLECTOR CURRENT (AMP)
Figure 7. Turn−On Time
3.0
T_J = 25°C
I_B1 = I_B2
t_s′
I_C/I_B = 10
t_s′ ≈ t_s − 1/8 t_f
1.0
0.7
0.5
t_f @ V_CC = 30 V
0.3
t_f @ V_CC = 10 V
0.1
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10
30
I_C, COLLECTOR CURRENT (AMP)
Figure 8. Turn−Off Time
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