2N5194 Datasheet, PDF (4/8 Pages) ON Semiconductor – Silicon PNP Power Transistors(4 AMPERE)

2N5194 2N5195
2.0
1.0
0.7
0.5
tr @ VCC = 30 V
0.3
0.2
IC/IB = 10
TJ = 25°C
0.1
tr @ VCC = 10 V
0.07
0.05
0.03 ^{td @ VBE(off) = 2.0 V}
0.02
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 9. Turn–On Time
2.0
1.0
ts′
0.7
0.5
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
0.3
tf @ VCC = 30 V
0.2
tf @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 10. Turn–Off Time
10
5.0
TJ = 150°C
2.0
1.0 ms
5.0 ms
dc
100 µs
1.0
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
0.5
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
0.2
2N5194
0.1
1.0 2.0
2N5195
5.0
10
20
50
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 11. Rating and Thermal Data
Active–Region Safe Operating Area
Note 1:
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150_C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high–case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 _0.05
0.07
0.05 ^0.02
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
θ_JC(max) = 3.12°C/W
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
t, TIME OR PULSE WIDTH (ms)
Figure 12. Thermal Response
100 200 300 500 1000
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