2N5194 Datasheet, PDF (2/8 Pages) ON Semiconductor – Silicon PNP Power Transistors(4 AMPERE)

2N5194 2N5195
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{*ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 1.5 Adc, VCE = 2.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 4.0 Adc, VCE = 2.0 Vdc)}
hFE
2N5194
25
2N5195
20
2N5194
10
2N5195
7.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Saturation Voltage (2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1.5 Adc, IB = 0.15 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 4.0 Adc, IB = 1.0 Adc)}
VCE(sat)
—
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base–Emitter On Voltage (2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Current–Gain — Bandwidth Product}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)}
fT
2.0
Max
Unit
—
100
80
—
—
Vdc
0.6
1.4
1.2
Vdc
—
MHz
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
10
7.0
TJ = 150°C
5.0
3.0
2.0
1.0
25°C
0.7
-ā55°C
0.5
0.3
0.2
0.1
0.004 0.007 0.01
0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
VCE = 2.0 V
VCE = 10 V
2.0 3.0 4.0
2.0
1.6
1.2
IC = 10 mA
0.8
0.4
100 mA
TJ = 25°C
1.0 A
3.0 A
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 2. Collector Saturation Region
50 70 100
200 300 500
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