2N5194 Datasheet, PDF (3/8 Pages) ON Semiconductor – Silicon PNP Power Transistors(4 AMPERE)

2N5194 2N5195
2.0
TJ = 25°C
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
2.0 3.0 4.0
+ā2.5
+ā2.0
*APPLIES FOR IC/IB ≤ hFE @ VCE
TJ = -ā65°C to +150°C
+ā1.5
+ā1.0
+ā0.5
*θVC for VCE(sat)
0
-ā0.5
-ā1.0
-ā1.5
θVB for VBE
-ā2.0
-ā2.5
0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. Temperature Coefficients
103
VCE = 30 Vdc
102
TJ = 150°C
101
100
100°C
10-1
REVERSE
FORWARD
10-ā2
25°C
10-ā3
+ā0.4 +ā0.3 +ā0.2 +ā0.1
ICES
0 -ā0.1 -ā0.2 -ā0.3 -ā0.4 -ā0.5 -ā0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cut–Off Region
107
106
IC = 10 x ICES
105
104
IC = 2 x ICES
IC ≈ ICES
VCE = 30 V
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
102
20
40
60
80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Effects of Base–Emitter Resistance
TURN-ON PULSE
VBE(off)
Vin 0
VCC RC
Vin RB
SCOPE
APPROX
-11 V
t1
t2
Vin
APPROX
-11 V
t3
TURN-OFF PULSE
CjdĂ<<ĂCeb
APPROX
+ā9.0 V
+ā4.0 V
RB AND RC VARIED
TO OBTAIN DESIRED
CURRENT LEVELS
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
Figure 7. Switching Time Equivalent Test Circuit
500
TJ = 25°C
300
200
100
Ceb
Ccb
70
50
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
20 30 40
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