SMBT35200MT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon

MBT35200MT1
0.1
I_C/I_B = 100
50
0.01
10
0.25
I_C/I_B = 50
0.20
0.15
0.10
0.05
100°C
25°C
-55°C
0.001
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
0
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1.6
100°C
1.4
1.2
25°C
1.0
0.8
0.6 ^-55°C
0.4
0.2
0
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus
Collector Current
1.1
1.0
0.9
-55°C
0.8
25°C
0.7
0.6
100°C
0.5
0.4
0.3
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Base Emitter Turn−On Voltage
versus Collector Current
1.0
-55°C
0.8
25°C
0.6
100°C
0.4
0.2
0
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
750
700
650
600
550
500
450
400
350
300
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_EB, EMITTER BASE VOLTAGE (VOLTS)
Figure 6. Input Capacitance
http://onsemi.com
3