English
Language : 

SMBT35200MT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon
◁
MBT35200MT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −35 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = −35 Vdc)
ICES
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = −1.0 A, VCE = −1.5 V)
(IC = −1.5 A, VCE = −1.5 V)
(IC = −2.0 A, VCE = −3.0 V)
Collector −Emitter Saturation Voltage (Note 1)
(IC = −0.8 A, IB = −0.008 A)
(IC = −1.2 A, IB = −0.012 A)
(IC = −2.0 A, IB = −0.02 A)
Base −Emitter Saturation Voltage (Note 1)
(IC = −1.2 A, IB = −0.012 A)
hFE
VCE(sat)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 1)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
fT
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)
Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
Cibo
Cobo
ton
toff
Min
−35
−55
−5.0
−
−
−
100
100
100
−
−
−
−
−
100
−
−
−
−
Typical
Max
−45
−65
−7.0
−0.03
−0.03
−0.01
−
−
−
−0.1
−0.1
−0.1
200
−
200
400
200
−
−0.125
−0.175
−0.260
−0.15
−0.20
−0.31
−0.68
−0.85
−0.81
−0.875
−
−
600
650
85
100
35
−
225
−
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
V
V
V
MHz
pF
pF
nS
nS
http://onsemi.com
2
 ▷