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NSTB1005DXV5T1G Datasheet, PDF (3/5 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors | |||
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1
IC/IB = 10
NSTB1005DXV5T1G
TYPICAL ELECTRICAL CHARACTERISTICS â PNP TRANSISTOR
1000
TAâ=â-25°C
â0.1
100
25°C
75°C
VCE = 10 V
TAâ=â75°C
25°C
-25°C
â0.01
0
10
â20
â40
50
1
IC, COLLECTOR CURRENT (mA)
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
100
75°C
25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TAâ=â-25°C
1
2
â0.1
1
â0.01
VO = 5 V
0
0
10
20
30
40
50
â0.001
0
1 â2 3
â4 â5 â6 â7 â8 â9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TAâ=â-25°C
25°C
75°C
â0.1
0
10
â20
â30
â40
â50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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