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NSTB1005DXV5T1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors | |||
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NSTB1005DXV5T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Q1 TRANSISTOR: PNP â OFF CHARACTERISTICS
CollectorâBase Cutoff Current (VCB = 50 V, IE = 0)
CollectorâEmitter Cutoff Current (VCE = 50 V, IB = 0)
EmitterâBase Cutoff Current (VEB = 6.0 V, IC = 0)
CollectorâBase Breakdown Voltage (IC = 10 mA, IE = 0)
CollectorâEmitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS
DC Current Gain
CollectorâEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio
Q2 TRANSISTOR: NPN â OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0, IC = 0)
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
CollectorâEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio
250
200
Symbol
Min
Typ
Max Unit
ICBO
â
ICEO
â
IEBO
â
V(BR)CBO
50
V(BR)CEO
50
â
100 nAdc
â
500 nAdc
â
0.1 mAdc
â
â
Vdc
â
â
Vdc
hFE
80
140
â
VCE(sat)
â
â
0.25 Vdc
VOL
â
â
0.2
Vdc
VOH
4.9
â
â
Vdc
R1
32.9
47
61.1
kW
R1/R2
0.8
1.0
1.2
ICBO
â
â
100 nAdc
ICEO
â
â
500 nAdc
IEBO
â
â
0.1 mAdc
V(BR)CBO
50
V(BR)CEO
50
hFE
80
VCE(SAT)
â
VOL
â
VOH
4.9
R1
33
R1/R2
0.8
â
â
Vdc
â
â
Vdc
140
â
â
0.25
Vdc
â
0.2
Vdc
â
â
Vdc
47
61
kW
1.0
1.2
150
100
RqJA = 833°C/W
50
0
-â50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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