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NSS60600MZ4 Datasheet, PDF (3/5 Pages) ON Semiconductor – 60 V, 6.0 A, Low VCE(sat) PNP Transistor | |||
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1000
100
150°C
25°C
â40°C
NSS60600MZ4
TYPICAL CHARACTERISTICS
VCE = 2 V
1000
100
150°C
25°C
â40°C
VCE = 4 V
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
IC/IB = 10
0.1
150°C
25°C
â40°C
0.01
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
1
IC/IB = 50
â40°C
25°C
0.1
150°C
0.001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. CollectorâEmitter Saturation Voltage
0.01
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. CollectorâEmitter Saturation Voltage
10
1.2
TJ = 25°C
1.1 VCE = 2 V
1.0
1
0.9
IC = 6 A
0.8
â40°C
0.7
0.6
25°C
3A
0.5
0.1
0.4
2A
0.3
150°C
0.1 A
1A
0.2
0.5 A
0.1
0.01
0
1.0Eâ04 1.0Eâ03 1.0Eâ02 1.0Eâ01 1.0E+00 1.0E+01 0.001
0.01
0.1
1
10
IB, BASE CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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