NSS60600MZ4 Datasheet, PDF (1/5 Pages) ON Semiconductor – 60 V, 6.0 A, Low VCE(sat) PNP Transistor

NSS60600MZ4
60 V, 6.0 A, Low V_CE(sat)
PNP Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V_CE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
I_CM
−60
Vdc
−100
Vdc
−6.0
Vdc
−6.0
A
−12.0
A
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
800
mW
6.5
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
155
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
2
W
15.6
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
64
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P_Dsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 7.6 mm², 1 oz. copper traces.
2. FR−4 @ 645 mm², 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 − Rev. 2
http://onsemi.com
−60 VOLTS, 6.0 AMPS
2.0 WATTS
PNP LOW V_CE(sat) TRANSISTOR
EQUIVALENT R_DS(on) 50 mW
C 2,4
B1 E3
MARKING
DIAGRAM
SOT−223
AYW
CASE 318E
60600G
STYLE 1
1
A
Y
W
60600
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
Device
Package
Shipping^†
NSS60600MZ4T1G SOT−223
(Pb−Free)
1000/
Tape & Reel
NSS60600MZ4T3G SOT−223
(Pb−Free)
4000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60600MZ4/D