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NSS60600MZ4 Datasheet, PDF (2/5 Pages) ON Semiconductor – 60 V, 6.0 A, Low VCE(sat) PNP Transistor
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NSS60600MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current (VCB = −100 Vdc, IE = 0)
Emitter Cutoff Current (VEB = −6.0 Vdc)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
DC Current Gain (Note 4)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −6.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −2.0 mA)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
(IC = −3.0 A, IB = −60 mA)
(IC = −6.0 A, IB = −0.6 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.1 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −500 mA, VCE = −10 V, f = 1.0 MHz)
Input Capacitance (VEB = 5.0 V, f = 1.0 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
2.5
Min
−60
−100
−6.0
150
120
100
70
100
Typ
Max
Unit
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
360
−0.050
−0.100
360
60
−0.050
−0.070
−0.120
−0.250
−0.350
−1.0
−0.900
V
V
V
MHz
pF
pF
100
ns
180
ns
540
ns
145
ns
2.0
1.5
TC
1.0
0.5
0
25
TA
50
75
100
125
150
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
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