NSS30201MR6T1G Datasheet, PDF (3/6 Pages) ON Semiconductor – 30 V, 3 A, Low VCE(sat) NPN Transistor

NSS30201MR6T1G
1.0
0.9
I_C = 2 A
0.8
0.7
I_C = 1 A
0.6
0.5
0.4
0.3
0.2
I_C = 500 mA
0.1 _{IC = 100 mA}
0
0.001
0.01
I_b (A)
Figure 1. V_{CE (sat)} versus I_b
0.1 0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
I_c/I_b = 100
I_c/I_b = 10
0.01
0.1
I_c (A)
Figure 2. V_{CE (sat)} versus I_c
12
800
700 _+125°C
600
+25°C
500
400
300 ^{−55°C}
200
100
0
0.001
V_CE = 5 V
0.01
0.1
I_c (A)
Figure 3. h_FE versus I_c
12
1.2
1.0
0.8 ^{−55°C}
+25°C
0.6
0.4 ^+125°C
V_CE = 5 V
0.2
0
0.001
0.01
0.1
I_c (A)
Figure 4. V_BE(on) versus I_c
12
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
10.00
I_c/I_b = 10
I_c/I_b = 100
0.01
0.1
I_c (A)
Figure 5. V_BE(sat) versus I_c
12
3.0
1.00
1 ms
0.10
10 ms
100 ms
1s
SINGLE PULSE T_amb = 25°C
0.01
0.10
1.00
10.00
V_CE(sat) (V)
Figure 6. Safe Operating Area
dc
100.00
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