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NSS30201MR6T1G Datasheet, PDF (2/6 Pages) ON Semiconductor – 30 V, 3 A, Low VCE(sat) NPN Transistor
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NSS30201MR6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector−Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
Collector−Emitter Cutoff Current
(VCES = 30 V)
Emitter Cutoff Current
(VEB = 4.0 V)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
Base −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.1 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
4. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
Symbol Min
Typ
Max
V(BR)CEO
30
−
−
V(BR)CBO
50
−
−
V(BR)EBO
5.0
−
−
ICBO
−
−
0.1
ICES
−
−
0.1
IEBO
−
0.1
hFE
300
−
−
300
500
900
200
−
−
VCE(sat)
−
0.10 0.200
−
0.06 0.125
−
0.05 0.075
VBE(sat)
−
−
1.1
VBE(on)
−
−
1.1
fT
200
300
−
Cobo
−
−
15
Unit
V
V
V
mA
mA
mA
V
V
V
MHz
pF
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