NSS30201MR6T1G Datasheet, PDF (1/6 Pages) ON Semiconductor – 30 V, 3 A, Low VCE(sat) NPN Transistor

NSS30201MR6T1G
30 V, 3 A, Low V_CE(sat)
NPN Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
I_CM
30
V
50
V
5.0
V
2.0
A
3.0
A
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
535
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
234
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
1.180
9.4
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
106
°C/W
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 s)
R_qJL (Note 1)
R_qJL (Note 2)
P_Dsingle
(Notes 2 and 3)
110
50
1.75
°C/W
°C/W
W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 with 1 oz and 3.9 mm² of copper area.
2. FR−4 with 1 oz and 645 mm² of copper area.
3. Refer to Figure 8.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 0
http://onsemi.com
30 VOLTS
3.0 AMPS
NPN LOW V_CE(sat) TRANSISTOR
EQUIVALENT R_DS(on) 100 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
6 ⁵⁴
1 ²³
TSOP−6
CASE 318G
STYLE 6
DEVICE MARKING
VS7^M
VS7 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
NSS30201MR6T1G TSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS30201MR6/D