NSS30101LT1G Datasheet, PDF (3/4 Pages) ON Semiconductor – 30 V, 2 A, Low VCE(sat) NPN Transistor

NSS30101LT1G
800
700 _+125°C
600
500 _+25°C
400
300 ^{−55°C}
200
100
0
0.001
V_CE = 5 V
0.01
0.1
I_c (A)
Figure 3. h_FE versus I_c
12
1.2
1.0
0.8 ^{−55°C}
+25°C
0.6
0.4 ^+125°C
V_CE = 5 V
0.2
0
0.001
0.01
0.1
I_c (A)
Figure 4. V_BE(on) versus I_c
12
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
10
I_c/I_b = 10
I_c/I_b = 100
0.01
0.1
I_c (A)
Figure 5. V_BE(sat) versus I_c
12
1
1 ms
10 ms
0.1
100 ms
1s
SINGLE PULSE T_amb = 25°C
0.01
0.1
1
10
dc
100
V_CE (V)
Figure 6. Safe Operating Area
1.0E+00
0.5 0.2 0.1
0.05
0.02
1.0E−01
D = 0.01
1.0E−02
r(t)
1.0E−03
1E−05
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (sec)
Figure 7. Normalized Thermal Response
100
1000
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