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NSS30101LT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – 30 V, 2 A, Low VCE(sat) NPN Transistor
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NSS30101LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Collector−Emitter Cutoff Current
(VCES = 30 Vdc)
Emitter Cutoff Current
(VEB = 4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 mA, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
Symbol
Min
V(BR)CEO
30
V(BR)CBO
50
V(BR)EBO
5.0
ICBO
−
ICES
−
IEBO
−
hFE
300
300
200
VCE(sat)
−
−
−
VBE(sat)
−
VBE(on)
−
fT
100
Cobo
−
Max
Unit
Vdc
−
Vdc
−
Vdc
−
mAdc
0.1
mAdc
0.1
mAdc
0.1
−
900
−
0.200
0.125
0.075
1.1
1.1
−
15
V
V
V
MHz
pF
1.0
0.9
IC = 2 A
0.8
0.7
IC = 1 A
0.6
0.5
0.4
0.3
0.2
IC = 500 mA
0.1 IC = 100 mA
0
0.001
0.01
Ib (A)
Figure 1. VCE versus Ib
0.1 0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
Ic/Ib = 100
Ic/Ib = 10
0.01
0.1
Ic (A)
Figure 2. VCE versus Ic
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