NSS30101LT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – 30 V, 2 A, Low VCE(sat) NPN Transistor

NSS30101LT1G
30 V, 2 A, Low V_CE(sat)
NPN Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
I_CM
30
Vdc
50
Vdc
5.0
Vdc
1.0
A
2.0
A
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
310
mW
2.5
mW/°C
Thermal Resistance,
Junction to Ambient
R_θJA (Note 1)
403
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
710
mW
5.7
mW/°C
Thermal Resistance,
Junction to Ambient
R_θJA (Note 2)
176
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P_Dsingle
575
mW
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 X 1.0 inch Pad.
http://onsemi.com
30 VOLTS
2.0 AMPS
NPN LOW V_CE(sat) TRANSISTOR
EQUIVALENT R_DS(on) 100 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
DEVICE MARKING
3
VS6
1
2
VS6 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping^†
NSS30101LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
June, 2005 − Rev. 0
Publication Order Number:
NSS30101L/D