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NSS30100LT1G_13 Datasheet, PDF (3/5 Pages) ON Semiconductor – 30 V, 2 A, Low VCE(sat) PNP Transistor
NSS30100LT1G
200
VCE = -2.0 V
150
100
50
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain versus
Collector Current
230
210
190
170
150
130
110
90
70
50
1.0
125°C
VCE = -1.0 V
25°C
-55°C
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain versus
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
VBE(sat)
VBE(on)
VCE(sat)
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
1.0
0.95
0.9
IC/IB = 10
0.85
0.8
0.75
IC/IB = 100
0.7
0.65
0.6
0.55
0.5
1000
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.0
0.8
0.6
1000 mA
0.4
100 mA
0.2
50 mA
10 mA
0
0.01
0.1
1.0
10
100
1000
IB, BASE CURRENT (mA)
Figure 5. Collector Emitter Saturation Voltage
versus Base Current
1.8
1.6
1.4
IC/IB = 100
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
IC/IB = 10
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
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