NSS30100LT1G_13 Datasheet, PDF (1/5 Pages) ON Semiconductor – 30 V, 2 A, Low VCE(sat) PNP Transistor

NSS30100LT1G
30 V, 2 A, Low V_CE(sat)
PNP Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
I_CM
−30
Vdc
−50
Vdc
−5.0
Vdc
−1.0
A
−2.0
A
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
310
mW
2.5
mW/°C
Thermal Resistance,
Junction to Ambient
R_θJA (Note 1)
403
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
710
mW
5.7
mW/°C
Thermal Resistance,
Junction to Ambient
R_θJA (Note 2)
176
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P_Dsingle
(Note 3)
575
mW
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 X 1.0 inch Pad.
3. Refer to Figure 8.
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 2
http://onsemi.com
30 VOLTS
2.0 AMPS
PNP LOW V_CE(sat) TRANSISTOR
EQUIVALENT R_DS(on) 200 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
VS4M G
G
1
VS4 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NSS30100LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS30100L/D