NSS30100LT1G_13 Datasheet, PDF (2/5 Pages) ON Semiconductor – 30 V, 2 A, Low VCE(sat) PNP Transistor

NSS30100LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = −0.1 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = −0.1 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −30 Vdc, I_E = 0)
Collector−Emitter Cutoff Current
(V_CES = −30 Vdc)
Emitter Cutoff Current
(V_EB = −4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4) (Figure 1)
(I_C = −1.0 mA, V_CE = −2.0 V)
(I_C = −500 mA, V_CE = −2.0 V)
(I_C = −1.0 A, V_CE = −2.0 V)
(I_C = 2.0 A, V_CE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4) (Figure 3)
(I_C = −0.5 A, I_B = −0.05 A)
(I_C = −1.0 A, I_B = 0.1 A)
(I_C = −2.0 A, I_B = −0.2 A)
Base −Emitter Saturation Voltage (Note 4) (Figure 2)
(I_C = −1.0 A, I_B = −0.1 A)
Base −Emitter Turn−on Voltage (Note 4)
(I_C = −1.0 A, V_CE = −2.0 V)
Cutoff Frequency
(I_C = −100 mA, V_CE = −5.0 V, f = 100 MHz)
Output Capacitance (f = 1.0 MHz)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Symbol
Min
Max
Unit
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_CES
I_EBO
−30
−50
−5.0
−
−
−
−
−
−
−0.1
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
h_FE
100
−
100
300
80
−
40
−
V_CE(sat)
V
−
−0.25
−
−0.30
−
−0.65
V_BE(sat)
V
−
−1.2
V_BE(on)
V
−
−1.1
f_T
MHz
100
−
Cobo
−
15
pF
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