NSR02F30MX Datasheet, PDF (3/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR02F30MX
TYPICAL CHARACTERISTICS
1000
100
125°C
10 150°C
85°C 25°C −25°C
1
0.1
0
0.1
0.2
0.3
0.4
V_F, FORWARD VOLTAGE (V)
Figure 3. Forward Voltage
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
0.5
0
125°C
85°C
25°C
−25°C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (V)
Figure 4. Leakage Current
10
12
9
T_A = 25°C
T_A = 25°C prior to surge
8
10
Based on square wave current
7
8
6
5
6
4
3
4
2
1
0
0
5
10
15
20
25
30
2
0
0.001 0.01
0.1
1
10
100 1000
V_R, REVERSE VOLTAGE (V)
T_P (mSec)
Figure 5. Total Capacitance
Figure 6. Forward Surge Current
1000
Duty Cycle = 50%
20%
100 10%
5%
2%
10
1%
1
Single Pulse
0.1
0.0000001 0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 7. Thermal Response
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