NSR02F30MX Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR02F30MX
Table 1. THERMAL CHARACTERISTICS
Rating
Symbol
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25_C
R_θJA
695
P_D
180
Storage Temperature Range
T_stg
−55 to +125
Junction Temperature
T_J
+125
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06″ thick single sided. Operating to steady state.
Table 2. ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol Min
Typ
Reverse Leakage
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Forward Voltage
Total Capacitance
Reverse Recovery Time
V_R = 10 V
V_R = 30 V
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
I_F = 200 mA
V_R = 1.0 V, f = 1.0 MHz
I_F = I_R = 10 mA, I_R(REC) = 1.0 mA, Figure 2
I_R
−
−
I_R
−
20
V_F
−
155
V_F
−
250
V_F
−
375
V_F
−
500
C_T
−
6
t_rr
−
2.4
Unit
°C/W
mW
°C
°C
Max Unit
15
mA
50
mA
mV
290
mV
490
mV
600
mV
8
pF
3
ns
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Peak Forward Recover Voltage Definition
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