NSR02F30MX Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR02F30MX
200 mA, 30 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in a spacing saving
x3DFN 0201 package ideal for space constraint applications.
Features
• Low Forward Voltage Drop − 500 mV (Typ.) @ I_F = 200 mA
• Low Reverse Current – 20 mA (Typ.) @ V_R = 30 V
• 200 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 2
− Machine Model: Class M3
− CDM: Class IV
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping and Protection
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current
(60 Hz @ 1 cycle)
V_R
I_F
I_FSM
30
V
200
mA
2
A
Repetitive Peak Forward Current
I_FRM
1
A
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Machine Model
ESD
2−4
kV
>400
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
1
Cathode
2
Anode
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
M
J = Specific Device Code
= (Rotated 180°)
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
NSR02F30MXT5G X3DFN 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 1
Publication Order Number:
NSR02F30MX/D