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NSM46211DW6T1G Datasheet, PDF (3/4 Pages) ON Semiconductor – Dual NPN Transistors
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NSM46211DW6T1G
ELECTRICAL CHARACTERISTICS - Q2 (NPN BRT) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
-
-
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
-
-
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
-
-
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
-
Collector-Emitter Breakdown Voltage (Note 2)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
-
ON CHARACTERISTICS (Note 2)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
35
60
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
-
-
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
-
-
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
-
Input Resistor
Resistor Ratio
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1
7.0
10
R1/R2
0.8
1.0
Max
Unit
100
nAdc
500
nAdc
0.5
mAdc
-
Vdc
-
Vdc
-
0.25
Vdc
0.2
Vdc
-
Vdc
13
kW
1.2
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