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| NSM46211DW6T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual NPN Transistors | |||
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NSM46211DW6T1G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, JunctionâtoâAmbient
Characteristic (Both Junctions Heated)
Total Device Dissipation,
TA = 25°C
Derate above 25°C
Thermal Resistance, JunctionâtoâAmbient
Junction and Storage Temperature
1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu.
ELECTRICAL CHARACTERISTICS - Q1 (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorÄ-ÄEmitter Breakdown Voltage
(IC = 10 mA)
CollectorÄ-ÄEmitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
CollectorÄ-ÄBase Breakdown Voltage
(IC = 10 mA)
EmitterÄ-ÄBase Breakdown Voltage
(IE = 10 mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
V(BR)CEO
65
V(BR)CES
80
V(BR)CBO
80
V(BR)EBO
6.0
ICBO
-
-
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
-
200
CollectorÄ-ÄEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
VCE(sat)
-
CollectorÄ-ÄEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
-
BaseÄ-ÄEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
VBE(sat)
-
BaseÄ-ÄEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
-
BaseÄ-ÄEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
BaseÄ-ÄEmitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
-
Symbol
PD
RqJA
Symbol
PD
RqJA
TJ, Tstg
Max
180 (Note 1)
1.44 (Note 1)
692 (Note 1)
Max
230
1.83
544
-Ä55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
Typ
Max
Unit
-
-
V
-
-
V
-
-
V
-
-
V
-
15
nA
-
5.0
mA
-
150
-
290
450
-
0.25
V
-
0.6
0.7
-
V
0.9
-
660
700
mV
-
770
http://onsemi.com
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