NSL12AWT1G Datasheet, PDF (3/4 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Low VCE(sat) Transistor

NSL12AWT1G
400
125°C
300
V_CE = 1.5 V
200 ^25°C
100 _{TA = −55°C}
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector
Current
1.0
0.9
0.8 ^{TA = −55°C}
0.7
25°C
0.6
0.5
0.4 ^125°C
0.3
0.001
0.01
V_CE = 1.5 V
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Base Emitter Voltage versus
Collector Current
1.0
10
0.9
I_C/I_B = 10
0.8
I_C/I_B = 100
0.7
0.6
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Base Emitter Saturation Voltage
versus Base Current
dc
1
1 s 100 ms 10 ms
1 ms
0.1
SINGLE PULSE T_A = 25°C
0.01
0.1
1
10
V_CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 6. Safe Operating Area
1
D = 0.50
D = 0.20
D = 0.10
0.1
D = 0.05
D = 0.02
0.01 ^{D = 0.01}
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 7. Normalized Thermal Response
100
1000
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