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NSL12AWT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Low VCE(sat) Transistor
NSL12AWT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current, (VCB = −12 Vdc, IE = 0)
Collector−Emitter Cutoff Current, (VCES = −12 Vdc, IE = 0)
Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
DC Current Gain (Note 3)
(IC = −0.5 A, VCE = −1.5 V)
(IC = −0.8 A, VCE = −1.5 V)
(IC = −1.0 A, VCE = −1.5 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.5 A, IB = −10 mA)
(IC = −0.8 A, IB = −16 mA)
(IC = −1.0 A, IB = −20 mA)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −20 mA)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −1.5 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Output Capacitance
(VCB = −1.5 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
Min
Typ
Max
Unit
−12
−12
−5.0
−
−
−
−15
−25
−7.0
−0.02
−0.03
−0.03
−
Vdc
−
Vdc
−
Vdc
−0.1
mAdc
−0.1
mAdc
−0.1
mAdc
100
180
−
100
165
300
100
160
−
V
−
−0.10 −0.160
−
−0.14 −0.235
−
−0.17 −0.290
V
−
−0.84
−0.95
V
−
−0.81
−0.95
MHz
−
100
−
pF
−
50
65
ORDERING INFORMATION
Device
Package
Shipping†
NSL12AWT1G
SOT−363
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
0.5
0.4
2A
0.3
0.2
1A
0.1
IC = 100 mA
800 mA
500 mA
0
1
10
100
IB, BASE CURRENT (mA)
Figure 1. Collector Emitter Voltage vs Base Current
0.5
0.4
0.3
0.2
IC/IB = 100
0.1
0
IC/IB = 10
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Collector Emitter Voltage vs Collector Current
http://onsemi.com
2