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NSL12AWT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Low VCE(sat) Transistor
NSL12AWT1G
High Current Surface Mount
PNP Silicon Low VCE(sat)
Transistor for Battery
Operated Applications
Features
• High Current Capability (3 A)
• High Power Handling (Up to 650 mW)
• Low VCE(s) (170 mV Typical @ 1 A)
• Small Size
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−12
Vdc
Collector-Base Voltage
VCBO
−12
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
Collector Current − Peak
ICM
−2.0
Adc
−3.0
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
450
mW
3.6
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
275
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
650
mW
5.2
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
192
°C/W
Thermal Resistance,
Junction−to−Lead 6
RqJL
105
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PD Single
1.4
W
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−4, Minimum Pad, 1 oz Coverage
2. FR−4, 1″ Pad, 1 oz Coverage
−55 to +150 °C
http://onsemi.com
12 VOLTS
3.0 AMPS
PNP TRANSISTOR
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
SC−88/SOT−363
CASE 419B
1
STYLE 20
MARKING DIAGRAM
6
11 MG
G
1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 3
Publication Order Number:
NSL12AW/D