NS2029M3T5G Datasheet, PDF (3/4 Pages) ON Semiconductor – PNP Silicon General Purpose Amplifier Transistor

NS2029M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
T_A = 25°C
120
1000
T_A = 75°C
T_A = 25°C
V_CE = 10 V
90
60
30
0
0
2
1.5
300 mA
250
200
150
100
I_B = 50 mA
3
6
9
12
15
V_CE, COLLECTOR VOLTAGE (V)
Figure 1. I_C - V_CE
T_A = 25°C
1
0.5
0
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
T_A = -ā 25°C
100
10
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
900
800
700
600
500
400
300
200
T_A = 25°C
V_CE = 5 V
100
0
0.2 0.5 1 5 10 20 40 60 80 100 150 200
I_C, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
13
14
12
12
11
10
10
8
9
6
8
4
7
2
6
0
0
1
2
3
4
0
10
20
30
40
V_EB (V)
V_CB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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