NS2029M3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – PNP Silicon General Purpose Amplifier Transistor

NS2029M3T5G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
•ăReduces Board Space
•ăHigh h_FE, 210ā-ā460 (Typical)
•ăLow V_CE(sat), < 0.5 V
•ăESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
•ăAvailable in 4 mm, 8000 Unit Tape & Reel
•ăThis is a Pb-Free Device
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V_(BR)CBO
Collector-Emitter Voltage
V_(BR)CEO
Emitter-Base Voltage
V_(BR)EBO
Collector Current - Continuous
I_C
THERMAL CHARACTERISTICS
-60
-50
-6.0
-100
Vdc
Vdc
Vdc
mAdc
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P_D
265
mW
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_stg
-ā55 ~ +ā150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT-723
CASE 631AA
2
1
9F M
9F = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
NS2029M3T5G
SOT-723 8000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
May, 2007 - Rev. 0
Publication Order Number:
NS2029M3/D