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| NS2029M3T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – PNP Silicon General Purpose Amplifier Transistor | |||
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NS2029M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = -50 mAdc, IE = 0)
V(BR)CBO
-60
-
-
Vdc
Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0)
V(BR)CEO
-50
-
-
Vdc
Emitter-Base Breakdown Voltage (IE = -50 mAdc, IE = 0)
V(BR)EBO
-6.0
-
-
Vdc
Collector-Base Cutoff Current (VCB = -30 Vdc, IE = 0)
ICBO
-
-
-0.5
nA
Emitter-Base Cutoff Current (VEB = -7.0 Vdc, IB = 0)
IEBO
-
-
-0.1
mA
Collector-Emitter Saturation Voltage (Note 2)
(IC = -50 mAdc, IB = -5.0 mAdc)
VCE(sat)
-
Vdc
-
-0.5
DC Current Gain (Note 2)
(VCE = -6.0 Vdc, IC = -1.0 mAdc)
hFE
-
120
-
560
Transition Frequency
(VCE = -12 Vdc, IC = -2.0 mAdc, f = 30 MHz)
fT
MHz
-
140
-
Output Capacitance (VCB = -12 Vdc, IE = 0 Adc, f = 1.0 MHz)
COB
2. Pulse Test: Pulse Width ⤠300 ms, Duty Cycle ⤠2%.
-
3.5
-
pF
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