MTB33N10E Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 33 AMPERES 100 VOLTS

MTB33N10E
TYPICAL ELECTRICAL CHARACTERISTICS
90
80
T_J = 25°C
V_GS = 10 V
70
9V
60
8V
50
40
7V
30
20
6V
10
5V
0
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
90
80
V_DS ≥ 10 V
T_J = −55°C
70
60
25°C
50
100°C
40
30
20
10
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.09
V_GS = 10 V
0.08
0.07
T_J = 100°C
0.06
0.05
25°C
0.04
− 55°C
0.03
0.02
0
6 12 18 24 30 36 42 48 54 60 66
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.053
0.051
T_J = 25°C
0.049
0.047
0.045
0.043
V_GS = 10 V
0.041
0.039
15 V
0.037
5
11 17
23 29 35 41 47 53 59 65
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
V_GS = 10 V
1.8 I_D = 16.5 A
10000
V_GS = 0 V
1.6
1000
T_J = 125°C
1.4
1.2
100°C
100
1.0
25°C
0.8
0.6
−50 −25
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
20 30 40 50 60 70 80 90 100
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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