MTB33N10E Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 33 AMPERES 100 VOLTS

MTB33N10E
Preferred Device
Power MOSFET
33 Amps, 100 Volts
N−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_A = 25°C,
when mounted with the minimum
recommended pad size
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
100
100
± 20
± 40
33
20
99
125
1.0
2.5
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
150
Single Pulse Drain−to−Source Avalanche
E_AS
545
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc,
I_L = 33 Apk, L = 1.000 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
R_θJC
1.0
− Junction to Ambient
R_θJA
62.5
− Junction to Ambient, when mounted
R_θJA
50
with the minimum recommended pad size
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
http://onsemi.com
33 AMPERES
100 VOLTS
R_DS(on) = 60 mΩ
N−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
T33N10E
YWW
123
Gate Drain Source
T33N10E
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB33N10E
MTB33N10ET4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MTB33N10E/D