MTB33N10E Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 33 AMPERES 100 VOLTS

MTB33N10E
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 μAdc)
Temperature Coefficient (Positive)
V_(BR)DSS
100
−
−
118
−
Vdc
−
mV/°C
Zero Gate Voltage Drain Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
(V_DS = 100 Vdc, V_GS = 0 Vdc, T_J = − 25°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 μAdc)
Temperature Coefficient (Negative)
I_DSS
I_GSS
μAdc
−
−
10
−
−
100
−
−
100
nAdc
V_GS(th)
2.0
−
4.0
Vdc
−
7.0
−
mV/°C
Static Drain−Source On−Resistance (V_GS = 10 Vdc, I_D = 16.5 Adc)
Drain−Source On−Voltage (V_GS = 10 Vdc)
(I_D = 33 Adc)
(I_D = 16.5 Adc, T_J = − 25°C)
Forward Transconductance (V_DS = 8.0 Vdc, I_D = 16.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 50 Vdc, I_D = 33 Adc,
V_GS = 10 Vdc,
R_G = 9.1 Ω)
Gate Charge
(See Figure 8)
(V_DS = 80 Vdc, I_D = 33 Adc,
V_GS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(I_S = 33 Adc, V_GS = 0 Vdc)
(I_S = 33 Adc, V_GS = 0 Vdc,
T_J = 125°C)
Reverse Recovery Time
(See Figure 14)
(I_S = 33 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
R_DS(on)
V_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
t_a
t_b
Q_RR
L_D
−
0.04
0.06
Ohm
Vdc
−
1.6
2.4
−
−
2.1
8.0
−
−
mhos
−
1830 2500
pF
−
678
1200
−
559
1100
−
18
40
ns
−
164
330
−
48
100
−
83
170
−
52
110
nC
−
12
−
−
32
−
−
24
−
Vdc
−
1.0
2.0
−
0.98
−
−
144
−
ns
−
108
−
−
36
−
−
0.93
−
μC
−
4.5
−
nH
Internal Source Inductance
L_S
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
−
7.5
−
nH
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