MTB23P06V Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 23 AMPERES 60 VOLTS

MTB23P06V
TYPICAL ELECTRICAL CHARACTERISTICS
50
T_J = 25°C
V_GS = 10V
8V
40
9V
7V
30
20
6V
10
5V
4V
0
0
2
4
6
8
10
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
V_DS ≥ 10 V
35
30
25
T_J = −55°C
25°C
100°C
20
15
10
5
0
2
3
4
5
6
7
8
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.16
V_GS = 10 V
0.14
T_J = 100°C
0.12
0.1
25°C
0.08
− 55°C
0.06
0.04
0.02
0 5 10 15 20 25 30 35 40 45
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.12
T_J = 25°C
0.115
0.11
0.105
0.1
V_GS = 10 V
0.095
15 V
0.09
0.085
0.08
0 5 10 15 20 25 30 35 40 45 50
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
1.6 ^VGS ^{= 10 V}
I_D = 11.5 A
1.4
100
V_GS = 0 V
1.2
1
T_J = 125°C
10
0.8
0.6
0.4
0.2
0
−50 −25
0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
1
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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