MTB23P06V Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 23 AMPERES 60 VOLTS

MTB23P06V
Preferred Device
Power MOSFET
23 Amps, 60 Volts
P−Channel D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 10 ms)
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ T_A = 25°C
(Note 1.)
Operating and Storage Temperature
Range
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
60
Vdc
60
Vdc
± 15
± 25
23
15
81
90
0.60
3.0
Vdc
Vpk
Adc
Apk
Watts
W/°C
T_J, T_stg − 55 to
°C
175
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 23 Apk, L = 3.0 mH, R_G = 25 Ω)
794
mJ
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
R_θJC
R_θJA
R_θJA
°C/W
1.67
62.5
50
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from Case for 10
seconds
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
23 AMPERES
60 VOLTS
R_DS(on) = 120 mΩ
P−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB23P06V
YWW
12
Gate Drain
3
Source
MTB23P06V
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB23P06V
MTB23P06VT4
D²PAK
D²PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MTB23P06V/D