MTB23P06V Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 23 AMPERES 60 VOLTS

MTB23P06V
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V_DS = 60 Vdc, V_GS = 0 Vdc)
(V_DS = 60 Vdc, V_GS = 0 Vdc, T_J = 150°C)
Gate−Body Leakage Current (V_GS = ± 15 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 μAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (V_GS = 10 Vdc, I_D = 11.5 Adc)
Drain−Source On−Voltage
(V_GS = 10 Vdc, I_D = 23 Adc)
(V_GS = 10 Vdc, I_D = 11.5 Adc, T_J = 150°C)
Forward Transconductance
(V_DS = 10.9 Vdc, I_D = 11.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 30 Vdc, I_D = 23 Adc,
V_GS = 10 Vdc,
R_G = 9.1 Ω)
Gate Charge
(See Figure 8)
(V_DS = 48 Vdc, I_D = 23 Adc,
V_GS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 23 Adc, V_GS = 0 Vdc)
(I_S = 23 Adc, V_GS = 0 Vdc, T_J = 150°C)
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
V_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
Reverse Recovery Time
Reverse Recovery Stored
Charge
(I_S = 23 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)
t_rr
t_a
t_b
Q_RR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
L_D
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
L_S
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Min
Typ
Max
Unit
60
−
−
60.5
−
Vdc
−
mV/°C
μAdc
−
−
10
−
−
100
−
−
100
nAdc
2.0
2.8
4.0
Vdc
−
5.3
−
mV/°C
−
0.093
0.12
Ohm
Vdc
−
2.1
3.3
−
−
3.2
5.0
11.5
Mhos
−
−
1160
1620
pF
−
380
530
−
105
210
−
13.8
30
ns
−
98.3
200
−
41
80
−
62
120
−
38
50
nC
−
7.0
−
−
18
−
−
14
−
Vdc
−
2.2
3.5
−
1.8
−
−
142
−
ns
−
100
−
−
41
−
−
0.804
−
μC
nH
−
3.5
−
4.5
−
7.5
−
nH
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