MMBTA56WT1 Datasheet, PDF (3/5 Pages) ON Semiconductor – Driver Transistor PNP Silicon

MMBTA56WT1
200
V_CE = −2.0 V
T_J = 25°C
100
70
50
30
20
−2.0 −3.0 −5.0 −7.0 −10
−20 −30 −50 −70 −100 −200
I_C, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain — Bandwidth Product
100
70
T_J = 25°C
50
C_ibo
30
20
10
7.0
5.0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
C_obo
−50 −100
1.0 k
700
500
t_s
300
200
100
70
50
30
V_CC = −40 V
I_C/I_B = 10
20 I_B1 = I_B2
T_J = 25°C
10
−5.0 −7.0 −10
t_d @ V_BE(off) = −0.5 V
−20 −30 −50 −70 −100
t_f
t_r
−200 −300 −500
I_C, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
−1.0 k
−700
−500
−300
−200
−100
−70
−50
−30
−20
T_A = 25°C
100 ms
1.0 ms
1.0 s
T_C = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−10
−1.0
−2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
400
T_J = 125°C
200
25°C
V_CE = −1.0 V
−55°C
100
80
60
40
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200 −500
I_C, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
−1.0
T_J = 25°C
−0.8
V_BE(sat) @ I_C/I_B = 10
−0.6
V_BE(on) @ V_CE = −1.0 V
−0.4
−0.2
V_CE(sat) @ I_C/I_B = 10
0
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500
I_C, COLLECTOR CURRENT (mA)
Figure 7. “ON” Voltages
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