MMBTA56WT1 Datasheet, PDF (2/5 Pages) ON Semiconductor – Driver Transistor PNP Silicon

MMBTA56WT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I_C = −1.0 mAdc, I_B = 0)
Emitter−Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CE = −60 Vdc, I_B = 0)
Collector Cutoff Current
(V_CB = −60 Vdc, I_E = 0)
(V_CB = −80 Vdc, I_E = 0)
ON CHARACTERISTICS
DC Current Gain
(I_C = −10 mAdc, V_CE = −1.0 Vdc)
(I_C = −100 mAdc, V_CE = −1.0 Vdc)
Collector−Emitter Saturation Voltage
(I_C = −100 mAdc, I_B = −10 mAdc)
Base−Emitter On Voltage
(I_C = −100 mAdc, V_CE = −1.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I_C = −100 mAdc, V_CE = −1.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f_T is defined as the frequency at which |h_fe| extrapolates to unity.
Symbol
Min
Max
Unit
V_(BR)CEO
V_(BR)EBO
I_CES
I_CBO
−80
−
−4.0
−
−
−0.1
−
−
−
−0.1
Vdc
Vdc
mAdc
mAdc
h_FE
V_CE(sat)
V_BE(on)
−
100
−
100
−
−
−0.25
Vdc
−
−1.2
Vdc
f_T
50
−
MHz
5.0 ms
+10 V
0
t_r = 3.0 ns
TURN−ON TIME
−1.0 V
V_CC
+40 V
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
TURN−OFF TIME
+V_BB
V_CC
+40 V
5.0 ms
t_r = 3.0 ns
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
2