MMBTA56WT1 Datasheet, PDF (1/5 Pages) ON Semiconductor – Driver Transistor PNP Silicon

MMBTA56WT1
Driver Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model − 4 kV
Machine Model − 400 V
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−80
−80
−4.0
−500
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
T_A = 25°C
P_D
150
mW
Thermal Resistance, Junction to Ambient
R_qJA
833
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 1
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
FM M G
G
1
FM = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBTA56WT1
SC−70 3000/Tape & Reel
MMBTA56WT1G
SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBTA56WT1/D