MMBFU310LT1G Datasheet, PDF (3/4 Pages) ON Semiconductor – JFET Transistor

MMBFU310LT1G
100 k
10 k
1.0 k
Y_fs
Y_fs
100
1.0 k
V_GS(off) = - 2.3 V =
10
Y_os
V_GS(off) = - 5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
I_D, DRAIN CURRENT (mA)
Figure 3. Common−Source Output Admittance
and Forward Transconductance vs Drain Current
10
120
R_DS
96
7.0
72
C_gs
4.0
48
C_gd
24
1.0
0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
V_GS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. On Resistance and Junction
Capacitance vs Gate−Source Voltage
30
24 ^{VDS = 10 V}
I_D = 10 mA
T_A = 25°C
18
3.0
2.4
Y₁₁
1.8
12
Y₂₁
1.2
Y₂₂
6.0
0.6
Y₁₂
0
100
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 5. Common−Gate Y Parameter
Magnitude vs Frequency
q₂₁, q₁₁
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
130° 0°
100
q₁₂, q₂₂
- 20° 87°
q₂₂
- 20°
- 40° 86°
q₂₁
- 60°
- 80° 85°
- 100°
q₁₂
- 120° 84°
q₁₁
V_DS = 10 V
I_D = 10 mA
T_A = 25°C
- 140°
- 160° 83°
- 180°
200 300
- 200° 82°
500 700 1000
f, FREQUENCY (MHz)
Figure 7. Common−Gate Y Parameter
Phase−Angle vs Frequency
|S₂₁|, |S₁₁|
0.85 0.45
|S₁₂|, |S₂₂|
0.060 1.00
0.79 0.39
0.73 0.33
0.67 0.27
V_DS = 10 V
I_D = 10 mA
T_A = 25°C
S₂₂
S₂₁
0.048 0.98
0.036 0.96
0.024 0.94
S₁₁
0.61 0.21
0.012 0.92
0.55 0.15
100
S₁₂
0.90
200 300
500 700 1000
f, FREQUENCY (MHz)
Figure 6. Common−Gate S Parameter
Magnitude vs Frequency
q₁₁, q₁₂
- 20° 120°
q₁₁
- 40° 100° ^q21
q₂₂
q₂₁, q₂₂
0
- 20°
- 60° 80°
- 40°
- 80° 60°
q₁₂
- 100° 40°
- 120° 20°
100
q₂₁ ^{- 60°}
V_DS = 10 V
I_D = 10 mA
q₁₁
T_A = 25°C
200 300 500 700
f, FREQUENCY (MHz)
- 80°
- 100°
1000
Figure 8. S Parameter Phase−Angle
vs Frequency
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