MMBFU310LT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – JFET Transistor

MMBFU310LT1G
JFET Transistor
N−Channel
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
V_DS
25
Vdc
Gate−Source Voltage
V_GS
25
Vdc
Gate Current
I_G
10
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0  0.75  0.062 in.
P_D
225
mW
1.8
mW/°C
R_qJA
556
°C/W
T_J, T_stg − 55 to +150 °C
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 10
MARKING DIAGRAM
M6C M G
G
1
M6C = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBFU310LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
February, 2011 − Rev. 5
Publication Order Number:
MMBFU310LT1/D