MMBFU310LT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – JFET Transistor

MMBFU310LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage − (I_G = −1.0 mAdc, V_DS = 0)
Gate 1 Leakage Current − (V_GS = −15 Vdc, V_DS = 0)
Gate 2 Leakage Current − (V_GS = −15 Vdc, V_DS = 0, T_A = 125°C)
Gate Source Cutoff Voltage − (V_DS = 10 Vdc, I_D = 1.0 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current − (V_DS = 10 Vdc, V_GS = 0)
Gate−Source Forward Voltage − (I_G = 10 mAdc, V_DS = 0)
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance − (V_DS = 10 Vdc, I_D = 10 mAdc, f = 1.0 kHz)
Output Admittance − (V_DS = 10 Vdc, I_D = 10 mAdc, f = 1.0 kHz)
Input Capacitance − (V_GS = −10 Vdc, V_DS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance − (V_GS = −10 Vdc, V_DS = 0 Vdc, f = 1.0 MHz)
Symbol
V_(BR)GSS
I_G1SS
I_G2SS
V_GS(off)
I_DSS
V_GS(f)
|Y_fs|
|y_os|
C_iss
C_rss
Min
Max
Unit
− 25
−
−
− 2.5
−
− 150
− 150
− 6.0
Vdc
pA
nAdc
Vdc
24
60
mAdc
−
1.0
Vdc
10
18
mmhos
−
250 mmhos
−
5.0
pF
−
2.5
pF
70
60
V_DS = 10 V
50
I_DSS
40
+ 25°C
70
60
T_A = - 55°C
50
+ 25°C
40
30
+150°C ³⁰
20
+ 25°C
20
- 55°C
10
+150°C ¹⁰
0
-5.0
-4.0
-3.0
-2.0
-1.0
0
I_D - V_GS, GATE-SOURCE VOLTAGE (VOLTS)
I_DSS - V_GS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics vs Gate−Source Voltage
35
30
V_DS = 10 V
f = 1.0 MHz
25
T_A = - 55°C
+ 25°C
20
+150°C
15
+ 25°C
10
- 55°C
+150°C
5.0
0
5.0
4.0
3.0
2.0
1.0
0
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 2. Forward Transconductance
vs Gate−Source Voltage
http://onsemi.com
2