MMBF0202PLT1 Datasheet, PDF (3/8 Pages) Motorola, Inc – P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MMBF0202PLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
TC = -ā55°C
0.8
25°C
125°C
0.6
0.4
0.2
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
5
4
3
2
VGS = 4.5 V
1
VGS = 10 V
0
0
100
200
300
400
500
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
1.0
5V
0.8
VGS = 10, 9, 8, 7, 6 V
4V
0.6
0.4
3V
0.2
0
0
1
2
3
4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
5
4
200 mA
3
2
50 mA
1
0
0
-5
-10
-15
-20
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On–Resistance versus
Gate–to–Source Voltage
16
14
ID = 200 mA
12
10
2160
8
VDS = 10 V
6
VDS = 16 V
590
4
2
0
0
230
690
2270
3500
Qg, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
1.20
1.15
ID = 250 µA
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0 25 50 75 100 125 150
TEMPERATURE (°C)
Figure 6. Threshold Voltage Variance
Over Temperature
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